Abstract
Residual defects and solid phase epitaxial growth of BF 2 +-implanted (001) and (111)Si studied by cross-sectional transmission electron microscopy (XTEM) are reviewed. The distribution, density, and size of point defect clusters, twins, equi-axial loops, elongated loops, bubbles and polycrystalline silicon grains were analyzed in detail. The activation energy for the solid phase epitaxial growth of BF 2 + -implanted (001)Si was measured to be 3.0±0.1 ev. The feasibility of studying dynamical changes in BF 2 + -implanted silicon by XTEM with intermittent annealings in N 2 ambient up to 900 °C is demonstrated.