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0.67 μm2 self-aligned shallow trench isolation cell (SA-STI cell) for 3 V-only 256 Mbit NAND EEPROMs
Conference paper

0.67 μm2 self-aligned shallow trench isolation cell (SA-STI cell) for 3 V-only 256 Mbit NAND EEPROMs

S. Aritome, S. Satoh, T. Maruyama, H. Watanabe, S. Shuto, G.J. Hemink, R. Shirota, S. Watanabe and F. Masuoka
Technical Digest - International Electron Devices Meeting, pp.61-64
1994
Appears in  keyword about Physics

Abstract

Electronic Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering Materials Chemistry
The process technologies and the device performance of the SA-STI cell, which can be used to realize NAND EEPROMs of 256 Mbit and beyond is described. This structure reduces the cell size without scaling of the device dimension. The operation method for the NAND cell was also developed. A bi-polarity Fowler-Nordheim tunneling write/erase method can be used since this method achieves high reliability, high-speed programming and small sector size, which makes it a most promising candidate to replace magnetic disk memory.

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