Abstract
The fabrication and analysis of 1.3 μm InAsP multiquantum well laser diodes (MQW LD) was reported. The n-type modulation-doped (MD) InAsP/InP/InGaP active region in these diodes was grown by metalorganic chemical vapor deposition. The threshold current densities, differential and internal quantum efficiencies and internal optical losses in the devices were analyzed as a function of thickness and doping concentration. An optimum doping concentration of 1*10 18 cm -3 was obtained for the doped InGAP barrier and doped InP intermediate layer. The doping reduced the threshold current density and threshold gain to 0.8 kA/cm 2 and 43.08 cm -1 respectively.