Abstract
A fully CMOS process compatible FinFET Dielectric RRAM (FIND RRAM) is firstly proposed and demonstrated by 1kbit RRAM macro on 16nm standard FinFET CMOS logic platform. The new 16nm low voltage FIND RRAM consists of one FinFET transistor for select gate and an HfO2-based resistive film for a storage node of the cell. The FIND RRAM largely improves the set and reset characteristics by the locally enhanced field at fin corners and results in a low set voltage and reset current in array operation. Besides, by adopting the 16nm FinFET CMOS logic process, the FIND RRAM is shrink to an aggressive cell size of 0.07632μm 2 without additional mask or process step. The low voltage operation, excellent reliability, and very stable LRS/HRS window are all realized in the new fabricated 1kbit macro. They all support the new FIND RRAM technology is a promising embedded NVM in the coming FinFET era.