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24.5 A Twin-8T SRAM Computation-In-Memory Macro for Multiple-Bit CNN-Based Machine Learning
Conference paper

24.5 A Twin-8T SRAM Computation-In-Memory Macro for Multiple-Bit CNN-Based Machine Learning

Xin Si, Jia-Jing Chen, Yung-Ning Tu, Wei-Hsing Huang, Jing-Hong Wang, Yen-Cheng Chiu, Wei-Chen Wei, Ssu-Yen Wu, Xiaoyu Sun, Rui Liu, …
Digest of Technical Papers - IEEE International Solid-State Circuits Conference, Vol.2019-February, pp.396-398
01/2020

Abstract

Electronic, Optical and Magnetic Materials,Electri Electronic Optical and Magnetic Materials Electrical and Electronic Engineering

Computation-in-memory (CIM) is a promising avenue to improve the energy efficiency of multiply-and-accumulate (MAC) operations in AI chips. Multi-bit CNNs are required for high-inference accuracy in many applications [1-5]. There are challenges and tradeoffs for SRAM-based CIM: (1) tradeoffs between signal margin, cell stability and area overhead; (2) the high-weighted bit process variation dominates the end-result error rate; (3) trade-off between input bandwidth, speed and area. Previous SRAM CIM macros were limited to binary MAC operations for fully connected networks [1], or they used CIM for multiplication [2] or weight-combination operations [3] with additional large-area near-memory computing (NMC) logic for summation or MAC operations.

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