3D Monolithically Integrated Device of Si CMOS Logic, IGZO DRAM-like, and 2D MoS2 Phototransistor for Smart Image Sensing

F.M. Lee; P.H. Tseng; Y.Y. Lin; Y.H. Lin; W.L. Weng; N.C. Lin; P.J. Sung; C.C. Yang; W.F. Wu; P.H. Chen; Y.H. Lee; M.H. Lee; K.C. Wang; C.Y. Lu

doi:10.1109/IEDM45741.2023.10413766

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Conference paper

3D Monolithically Integrated Device of Si CMOS Logic, IGZO DRAM-like, and 2D MoS2 Phototransistor for Smart Image Sensing

F.M. Lee, P.H. Tseng, Y.Y. Lin, Y.H. Lin, W.L. Weng, N.C. Lin, P.J. Sung, C.C. Yang, W.F. Wu, P.H. Chen, …

Technical Digest - International Electron Devices Meeting, IEDM

2023

DOI: https://doi.org/10.1109/IEDM45741.2023.10413766

Appears in keyword about Physics

Abstract

Electronic

Optical and Magnetic Materials

Condensed Matter Physics

Electrical and Electronic Engineering

Materials Chemistry

We proposed a three-tier monolithic 3D (M3D) integration technology and constructed a unique platform to enable smart image sensor on an 8"Si wafer. In this platform, the 1 st tier's laser-annealed 20nm Si FinFETs successfully demonstrated logic inverter, NAND and NOR functions. The 2 nd tier's IGZO DRAM-like devices provided long data retention (>1000s) and robust non-destructive high current read. It is capable to serve as low-power working memory and MAC accelerator for computing-in-memory functions when configured in AND-type array. The top layer is a 5x5 array of MoS 2 TMD phototransistors with ultrahigh responsivity (>10 3 A/W) and tunable photogain (10°~10 4 ) for image sensing. All the functional units were fabricated by low-thermal budget processes and were connected by fine- pitch vertical interconnects for parallel signal processing.

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Title: 3D Monolithically Integrated Device of Si CMOS Logic, IGZO DRAM-like, and 2D MoS2 Phototransistor for Smart Image Sensing
Translated title: 3D Monolithically Integrated Device of Si CMOS Logic, IGZO DRAM-like, and 2D MoS2 Phototransistor for Smart Image Sensing
Creators - without role: F.M. Lee - Macronix International (Taiwan)
P.H. Tseng - Macronix International (Taiwan)
Y.Y. Lin - Macronix International (Taiwan)
Y.H. Lin - Macronix International (Taiwan)
W.L. Weng - Macronix International (Taiwan)
N.C. Lin - Taiwan Semiconductor Manufacturing Company (Taiwan)
P.J. Sung - Taiwan Semiconductor Manufacturing Company (Taiwan)
C.C. Yang - Taiwan Semiconductor Manufacturing Company (Taiwan)
W.F. Wu - Taiwan Semiconductor Manufacturing Company (Taiwan)
P.H. Chen - National Tsing Hua University
Y.H. Lee - National Tsing Hua University
M.H. Lee - Macronix International (Taiwan)
K.C. Wang - Macronix International (Taiwan)
C.Y. Lu - Macronix International (Taiwan)
Publication Details: Technical Digest - International Electron Devices Meeting, IEDM
Identifiers: 9798350327670; 9957768015606774
Academic Unit: Department of Materials Science and Engineering, College of Engineering, National Tsing Hua University
Language: English
Resource Type: Conference paper

3D Monolithically Integrated Device of Si CMOS Logic, IGZO DRAM-like, and 2D MoS2 Phototransistor for Smart Image Sensing

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