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3D time-contingent physical unclonable function array on 16nm FinFET dielectric RRAM
Conference paper

3D time-contingent physical unclonable function array on 16nm FinFET dielectric RRAM

Yi-Hung Chang, Po Shao Yeh, Yue-Der Chih, Jonathan Chang, Ya-Chin King and Chrong Jung Lin
2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings, pp.158-159
06/2017
DOI: https://doi.org/10.1109/EDTM.2017.7947558

Abstract

Hardware and Architecture Electrical and Electronic Engineering
The randomness and unpredictability of Random Telegraph Noise (RTN) of 16nm FinFET Dielectric (FIND) RRAM is firstly implemented to Time-Contingent Physical Unclonable Function (PUF) application. A novel 3D Time-Contingent Physical Unclonable Function (TC-PUF) realized by 1Kbit 16nm FinFET Dielectric (FIND) RRAM has been newly proposed and demonstrated on a pure 16nm FinFET CMOS logic technology. The new TC-PUF RRAM shows wide operation ranges of voltages and temperatures, and Randomness test confirms the feasibility and stability of the TC-PUF RRAM in the frequency, unpredictability, and long-run continuity.

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