4H-SiC npn bipolar junction transistors with BVCEO > 3,200 V

Chih-Fang Huang; James A. Cooper Jr.

Back

Conference paper

4H-SiC npn bipolar junction transistors with BVCEO > 3,200 V

Chih-Fang Huang and James A. Cooper Jr.

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), pp.57-60

2002

Abstract

4H-SiC BJTs with 1.05 mm 2 and 0.0072 mm 2 active areas are fabricated. Large devices show specific on-state resistance R ON,SP of 78 mΩ-cm 2 , common emitter current gain β of 15, and open-base blocking voltage BV CEO > 3,200 V at room temperature. Small devices have β around 20, and R ON,SP of 28 mΩ-cm 2 . R ON,SP increases with temperature while β decreases. β also decreases as the spacing between base contact implant and emitter finger is reduced. We attribute this to recombination in the p+ implanted base contact at implant-induced defect sites.

Metrics

1 Record Views

Details

Title: 4H-SiC npn bipolar junction transistors with BVCEO > 3,200 V
Creators - without role: Chih-Fang Huang - School of ECE , Purdue University
James A. Cooper Jr. - School of ECE , Purdue University
Publication Details: IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), pp.57-60
Grant note: IEEE
Identifiers: 9957766941106774
Academic Unit: Institute of Electronics Engineering, College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: English
Resource Type: Conference paper

4H-SiC npn bipolar junction transistors with BVCEO > 3,200 V

Abstract

Related links

Metrics

Details

National Tsing Hua University Social media