摘要
A newly developed FinFET-based wafer-level differential plasma charge recorder fabricated using a 5nm FinFET CMOS logic process is first presented in this paper. The device enables precise monitoring of charge polarization and quantification of plasma-induced charges generated in the 5nm FinFET BEOL dual damascene metallization processes. A high-resolution differential recorder device with differential pair structure has been developed and utilized to accurately record the transient charging behavior, distribution of plasma levels, polarization of charges, and interference in adjacent wells, and charging effect from BEOL Cu corrosion during dynamic BEOL process steps across the entire 12-inch wafers. The promising recording device offers a reliable and precise method for wafer-level plasma-induced charge monitoring in 5nm FinFET technology and beyond.