摘要
This paper presents a novel ultra-compact inductor-less wideband triple current reuse inverter-based cryogenic low-noise-amplifier (LNA) exploring noise reduction techniques in 28-\text{nm} CMOS for highly integrated quantum computer qubit readout. The proposed LNA consists of a stacked inverter-based input stage for noise optimization and input matching with shunt resistive feedback and cryogenic-aware back gate bias to control V_{\text{th }} at cryogenic temperatures. Also, a source-degenerated CS inverter-based main amplifier with an auxiliary amplifier is employed to cancel the channel thermal noise of the complementary main amplifier. The proposed LNA achieves a peak gain of 42.6 dB with a 3-\text{dB} bandwidth of 0.2-4.8 GHz and a noise figure (\text{NF}_{\min }) of \mathbf{0. 5 6} \text{dB} under a power dissipation of 9.7 mW at 4.2 K. To the best of our knowledge, this is first reported ultra-wideband cryo-CMOS inductor-less LNA achieves the highest FoM with the smallest area (0.003-\text{mm}^{2}) operating in the sub- 5 GHz frequency targeting spin qubit readout application.