A 0.7 nm EOT and low gate leakage current for MOS device with Ti/HfO                     2/Hf higher-k gate dielectric

Hao-Zhi Hong; Kuei-Shu Chang-Liao; Chung-Hao Fu; Chen-Chien Li; Ya-Yin Hsu; Tien-Ko Wang

doi:10.1109/ISDRS.2011.6135388

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A 0.7 nm EOT and low gate leakage current for MOS device with Ti/HfO 2/Hf higher-k gate dielectric

Hao-Zhi Hong, Kuei-Shu Chang-Liao, Chung-Hao Fu, Chen-Chien Li, Ya-Yin Hsu and Tien-Ko Wang

2011 International Semiconductor Device Research Symposium, ISDRS 2011, 6135388

2011

DOI: https://doi.org/10.1109/ISDRS.2011.6135388

Abstract

Electrical characteristics and reliability of MOS devices with HfO ₂ or Ti/HfO ₂ /Hf high-k dielectrics are studied and compared in this work. For the MOS device with Ti/HfO ₂ /Hf gate dielectric stack after a PDA at 600C, its equivalent oxide thickness (EOT) value is 7.1 and the leakage density is about 2.05 10 ¹ A/cm ² . © 2011 IEEE.

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Title: A 0.7 nm EOT and low gate leakage current for MOS device with Ti/HfO 2/Hf higher-k gate dielectric
Creators - without role: Hao-Zhi Hong - National Tsing Hua University
Kuei-Shu Chang-Liao - Department of Engineering and System Science , National Tsing Hua University
Chung-Hao Fu - National Tsing Hua University
Chen-Chien Li - National Tsing Hua University
Ya-Yin Hsu - National Tsing Hua University
Tien-Ko Wang - Department of Engineering and System Science , National Tsing Hua University
Publication Details: 2011 International Semiconductor Device Research Symposium, ISDRS 2011, 6135388
Identifiers: 9781457717550; 9957771788706774
Academic Unit: Institute of Nuclear Engineering and Science, College of Nuclear Science, National Tsing Hua University; National Tsing Hua University
Language: English
Resource Type: Conference paper

A 0.7 nm EOT and low gate leakage current for MOS device with Ti/HfO 2/Hf higher-k gate dielectric

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