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A 10-GHz bias modulated class-E power amplifier in 90-nm CMOS
Conference paper

A 10-GHz bias modulated class-E power amplifier in 90-nm CMOS

Sheng-Ting Chen, Yi-Chun Lee and Jenny Yi-Chun Liu
RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology, 7578120
27/09/2016

Abstract

bias modulation class-E switching amplifier
A fully integrated high efficiency 10-GHz class-E power amplifier prototype is demonstrated in CMOS 90-nm technology. It reaches an output power of 11.7 dBm, an output 1-dB compression point of 10.32 dBm, and a power-added-efficiency of 40.36% with a supply voltage of 1.5 V. A multiple-output DC-DC converter is proposed to provide several different regulated voltages to the power amplifier to optimize the efficiency at different power levels, and can be further extended as part of an envelope elimination and restoration system.

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