A 10-Gbps in0.53Ga0.47As p-i-n photodiode receiver on metamorphic InGaP buffered GaAs substrate

Yu-Sheng Liao; Gong-Ru Lin; Hao-Chung Kuo; Kai-Ming Feng; Milton Feng

doi:10.1109/CLEO.2006.4627958

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Conference paper

A 10-Gbps in0.53Ga0.47As p-i-n photodiode receiver on metamorphic InGaP buffered GaAs substrate

Yu-Sheng Liao, Gong-Ru Lin, Hao-Chung Kuo, Kai-Ming Feng and Milton Feng

Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006, 4627958

2006

DOI: https://doi.org/10.1109/CLEO.2006.4627958

Abstract

In _0.53 Ga _0.47 As p-i-n photodiode based OC-192 receiver grown on linearly graded metamorphic In _x Ga _1-x P buffered GaAs with ultra-low dark current of 3.6fA/μm ² , switching response of 41ps, bitor-rate of 10 ^-12 , and sensitivity of-19dBm are reported. © 2006 Optical Society of America.

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Title: A 10-Gbps in0.53Ga0.47As p-i-n photodiode receiver on metamorphic InGaP buffered GaAs substrate
Creators - without role: Yu-Sheng Liao - National Yang Ming Chiao Tung University
Gong-Ru Lin - Department of Photonics and Institute of Electro-Optical Engineering , National Chiao Tung University
Hao-Chung Kuo - Department of Photonics and Institute of Electro-Optical Engineering , National Chiao Tung University
Kai-Ming Feng - National Tsing Hua University
Milton Feng - University of Illinois Urbana-Champaign
Identifiers: 1557528136; 9781557528131; 9957776238706774
Academic Unit: Institute of Photonics Technologies, College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: English
Resource Type: Conference paper
Publication Details: Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006, 4627958

A 10-Gbps in0.53Ga0.47As p-i-n photodiode receiver on metamorphic InGaP buffered GaAs substrate

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