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A 125 mm2 1 Gb NAND flash memory with 10 MB/s program throughput
Conference paper

A 125 mm2 1 Gb NAND flash memory with 10 MB/s program throughput

Hiroshi Nakamura, Kenichi Imamiya, Toshihiko Himeno, Toshio Yamamura, Tamio Ikehashi, Ken Takeuchi, Kazushige Kanda, Koji Hosono, Takuya Futatsuyama, Koichi Kawai, …
Digest of Technical Papers - IEEE International Solid-State Circuits Conference, pp.106-107+450+99
2002

Abstract

Electronic Optical and Magnetic Materials Electrical and Electronic Engineering
A 125 mm 2 1 Gb NAND flash memory with 10 MB/s program throughput was presented. The 1 Gb flash has the highest memory density among 2LC memories and the highest cell/chip efficiency among flash memories. Two techniques were adopted in the architecture for reducing the chip size, the number of memory cells in a NAND string was changed to 32 and each word line (WL) crossed (1024+32)×16 bit lines.

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