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A 210GHz triple-push oscillator in 90nm CMOS
Conference paper

A 210GHz triple-push oscillator in 90nm CMOS

Cuei-Ling Hsieh and Jenny Yi-Chun Liu
IEEE MTT-S International Microwave Symposium Digest, pp.1349-1352
10/2017

Abstract

CMOS Millimeter-wave Oscillators Phase noise Triple-push Radiation Condensed Matter Physics Electrical and Electronic Engineering
A compact millimeter-wave oscillator in 90nm CMOS is presented. The proposed triple-push three-stage mutually coupled ring oscillator architecture significantly enhances the phase noise, output power, and power consumption. The measured phase noise is -114dBc/Hz at 10MHz offset with 28.6mW DC power consumption. The tuning range spans from 204.3GHz to 215GHz with the maximum output power of -7dBm at 210.8GHz. The FOM is -185.8dBc/Hz at 10MHz offset, and it remains below -179dBc/Hz within the entire tuning range.

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