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A 22nm 4Mb 8b-Precision ReRAM Computing-in-Memory Macro with 11.91 to 195.7TOPS/W for Tiny AI Edge Devices
Conference paper

A 22nm 4Mb 8b-Precision ReRAM Computing-in-Memory Macro with 11.91 to 195.7TOPS/W for Tiny AI Edge Devices

Cheng-Xin Xue, Je-Min Hung, Hui-Yao Kao, Yen-Hsiang Huang, Sheng-Po Huang, Fu-Chun Chang, Peng Chen, Ta-Wei Liu, Chuan-Jia Jhang, Chin-I Su, …
Digest of Technical Papers - IEEE International Solid-State Circuits Conference, Vol.64, pp.245-247
02/2021
DOI: https://doi.org/10.1109/ISSCC42613.2021.9365769

Abstract

Electronic Optical and Magnetic Materials Electrical and Electronic Engineering
Battery-powered tiny-AI edge devices require large-capacity nonvolatile compute-in-memory (nvCIM), with multibit input (IN), weight (W), and output (OUT) precision to support complex applications, high-energy efficiency (EF_{{mathrm {MAC}}}), and short computing latency (t_{{mathrm {AC}}}) for multiply-and-accumulate (MAC) operations. Due to the low read-disturbfree voltage of nonvolatile memory (NVM) devices and the large parasitic load on the bitline, most existing Mb-level nvCIM macros use a current-mode read scheme [1-5] and only achieve a low IN-W precision (binary to 4b).

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