Abstract
We develop 520-nm green GaN LEDs with a 340-MHz E-O bandwidth. For the first time, an OFDM signal modulates the green LED, which data rate achieves 2.16 Gb/s at a low current density 679 A/cm 2 .
- Title
- A 520-nm green GaN LED with high bandwidth and low current density for gigabits OFDM data communication
- Creators - without role
- Chien-Ju Chen - National Tsing Hua UniversityJhih-Heng Yan - Institute of Electronics Engineering , National Tsing Hua UniversityDe-Hua Chen - Institute of Electronics Engineering , National Tsing Hua UniversityKai-Hsiang Lin - Institute of Electronics Engineering , National Tsing Hua UniversityKai-Ming Feng - Institute of Electronics Engineering , National Tsing Hua UniversityKai-Ming Feng - National Tsing Hua UniversityMeng-Chyi Wu - Institute of Electronics Engineering , National Tsing Hua University
- Publication Details
- Optics InfoBase Conference Papers, Vol.Part F84-OFC 2018
- Identifiers
- 9781557528209; 9957768000306774
- Copyright
- © OSA 2018.
- Academic Unit
- Institute of Photonics Technologies, College of Electrical Engineering and Computer Science, National Tsing Hua University
- Language
- English
- Resource Type
- Conference paper