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A 60-GHz Adaptively Biased Power Amplifier with Predistortion Linearizer in 90-nm CMOS
Conference paper

A 60-GHz Adaptively Biased Power Amplifier with Predistortion Linearizer in 90-nm CMOS

Shih-Min Weng, Yi-Chun Lee, Tse-Hung Chen and Jenny Yi-Chun Liu
IEEE MTT-S International Microwave Symposium Digest, Vol.2018-June, pp.651-654
08/2018

Abstract

Adaptive bias CMOS millimeter-wave power amplifier power combining predistortion linearizer V-band Radiation Condensed Matter Physics Electrical and Electronic Engineering
In this paper, a high output power high efficiency 4-way combining power amplifier (PA) is proposed. By using adaptive bias control and predistortion linearization simultaneously, both the backoff efficiency and output 1-dB compression point (OP1 dB) are enhanced. Comparing with conventional cold-FET linearizers, the proposed linearizer employed a differential feedback to gate and body exhibits greater gain compensation capability. The V-band PA in 90-nm CMOS demonstrates an OP 1 dB of 18.9 dBm, and a power-added efficiency at OP1dB of 13.9%.

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