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A 60dB gain and 4dB noise figure CMOS V-band receiver based on two-dimensional passive Gm-enhancement
Conference paper

A 60dB gain and 4dB noise figure CMOS V-band receiver based on two-dimensional passive Gm-enhancement

Ning-Yi Wang, Hao Wu, Jenny Yi-Chun Liu, Jianhua Lu, Hsieh-Hung Hsieh, Po-Yi Wu, Chewnpu Jou and Mau-Chung Frank Chang
Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium, 5940603
2011

Abstract

60GHz CMOS integrated receiver low-noise high-gain amplifier mixer transformer two-dimensional g m-enhancement V-band
A direct conversion receiver which consists of low noise amplifier (LNA), mixer and programmable gain amplifier (PGA) for V-band (60GHz) applications is designed and realized in 65nm CMOS. A novel two-dimensional passive g m -enhancement technique is devised to boost the conversion gain and lower the Noise Figure (NF) with insignificant power overhead. An overall minimum SSB NF of 3.9dB and a maximum power conversion gain of 60dB have been validated from such fabricated receiver that occupies core silicon area of 0.2mm 2 and draws 34mA from 1V supply. © 2011 IEEE.

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