Abstract
A new ESD topology is proposed for RF low-noise amplifier (LNA). By using the modified silicon-controlled rectifier (MSCR) in conjunction with a P + /N-well diode clamp, a 5.8-GHz LNA with 6.5-kV ESD protection circuit is demonstrated by a 65-nm CMOS technology. Compared with the reference design, the new topology enhances the ESD level from 3.5 kV to 6.5 kV for human body model (HBM) while the noise figure (NF) is only 0.13 dB higher. Under a supply voltage of 1.2 V and drain current of 6.5 mA, the proposed ESD-protected LNA has a NF of 2.57 dB with an associated power gain of 16.7 dB. The input third-order intercept point (IIP3) is -11 dBm and the input and output return losses are below -15.9 dB and -20 dB, respectively. ©2010 IEEE.