A 7nm CMOS platform technology featuring 4th generation FinFET transistors with a 0.027um2 high density 6-T SRAM cell for mobile SoC applications

Shien-Yang Wu; C.Y. Lin; M.C. Chiang; J.J. Liaw; J.Y. Cheng; S.H. Yang; C.H. Tsai; P.N. Chen; T. Miyashita; C.H. Chang; V.S. Chang; K.H. Pan; J.H. Chen; Y.S. Mor; K.T. Lai; C.S. Liang; H.F. Chen; S.Y. Chang; C.J. Lin; C.H. Hsieh; R.F. Tsui; C.H. Yao; C.C. Chen; R. Chen; C.H. Lee; H.J. Lin; C.W. Chang; K.W. Chen; M.H. Tsai; K.S. Chen; Y. Ku; S.M. Jang

doi:10.1109/IEDM.2016.7838333

Conference paper

A 7nm CMOS platform technology featuring 4th generation FinFET transistors with a 0.027um2 high density 6-T SRAM cell for mobile SoC applications

Shien-Yang Wu, C.Y. Lin, M.C. Chiang, J.J. Liaw, J.Y. Cheng, S.H. Yang, C.H. Tsai, P.N. Chen, T. Miyashita, C.H. Chang, …

Technical Digest - International Electron Devices Meeting, IEDM, pp.2.6.1-2.6.4

01/2017

DOI: https://doi.org/10.1109/IEDM.2016.7838333

Appears in keyword about Physics

Abstract

Electronic

Optical and Magnetic Materials

Condensed Matter Physics

Materials Chemistry

Electrical and Electronic Engineering

For the first time, a leading edge 7nm CMOS platform technology for mobile SoC applications is presented. This technology provides >3.3X routed gate density and 35%∼40% speed gain or >65% power reduction over our 16nm FinFET technology. A fully functional 256Mb SRAM test-chip with the smallest high density SRAM cell of 0.027um <sup>2</sup> is demonstrated down to 0.5V. The 4 <sup>th</sup> generation FinFET transistors are optimized with device mismatch reduction by 25%∼35% and multi-Vt device options to enable low power and high performance design requirements.

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Title: A 7nm CMOS platform technology featuring 4th generation FinFET transistors with a 0.027um2 high density 6-T SRAM cell for mobile SoC applications
Translated title: A 7nm CMOS platform technology featuring 4th generation FinFET transistors with a 0.027um2 high density 6-T SRAM cell for mobile SoC applications
Creators - without role: Shien-Yang Wu - Taiwan Semiconductor Manufacturing Company (Taiwan)
C.Y. Lin - Taiwan Semiconductor Manufacturing Company (Taiwan)
M.C. Chiang - Taiwan Semiconductor Manufacturing Company (Taiwan)
J.J. Liaw - Taiwan Semiconductor Manufacturing Company (Taiwan)
J.Y. Cheng - Taiwan Semiconductor Manufacturing Company (Taiwan)
S.H. Yang - Taiwan Semiconductor Manufacturing Company (Taiwan)
C.H. Tsai - Taiwan Semiconductor Manufacturing Company (Taiwan)
P.N. Chen - Taiwan Semiconductor Manufacturing Company (Taiwan)
T. Miyashita - Taiwan Semiconductor Manufacturing Company (Taiwan)
C.H. Chang
V.S. Chang - Taiwan Semiconductor Manufacturing Company (Taiwan)
K.H. Pan - Taiwan Semiconductor Manufacturing Company (Taiwan)
J.H. Chen - Taiwan Semiconductor Manufacturing Company (Taiwan)
Y.S. Mor - Taiwan Semiconductor Manufacturing Company (Taiwan)
K.T. Lai - Taiwan Semiconductor Manufacturing Company (Taiwan)
C.S. Liang - Taiwan Semiconductor Manufacturing Company (Taiwan)
H.F. Chen - Taiwan Semiconductor Manufacturing Company (Taiwan)
S.Y. Chang - Taiwan Semiconductor Manufacturing Company (Taiwan)
C.J. Lin - Taiwan Semiconductor Manufacturing Company (Taiwan)
C.H. Hsieh - Taiwan Semiconductor Manufacturing Company (Taiwan)
R.F. Tsui - Taiwan Semiconductor Manufacturing Company (Taiwan)
C.H. Yao
C.C. Chen - Taiwan Semiconductor Manufacturing Company (Taiwan)
R. Chen - Taiwan Semiconductor Manufacturing Company (Taiwan)
C.H. Lee - Taiwan Semiconductor Manufacturing Company (Taiwan)
H.J. Lin - Taiwan Semiconductor Manufacturing Company (Taiwan)
C.W. Chang - Taiwan Semiconductor Manufacturing Company (Taiwan)
K.W. Chen - Taiwan Semiconductor Manufacturing Company (Taiwan)
M.H. Tsai - Taiwan Semiconductor Manufacturing Company (Taiwan)
K.S. Chen - Taiwan Semiconductor Manufacturing Company (Taiwan)
Y. Ku - Taiwan Semiconductor Manufacturing Company (Taiwan)
S.M. Jang - Taiwan Semiconductor Manufacturing Company (Taiwan)
Publication Details: Technical Digest - International Electron Devices Meeting, IEDM, pp.2.6.1-2.6.4
Identifiers: 9781509039012; 9957771769406774
Academic Unit: Institute of Electronics Engineering, College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: English
Resource Type: Conference paper

A 7nm CMOS platform technology featuring 4th generation FinFET transistors with a 0.027um2 high density 6-T SRAM cell for mobile SoC applications

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