A W-band three-stage power amplifier (PA) is demonstrated using 60-nm GaN-on-Si HEMT technology. The PA topology comprises one transistor for the first stage and two transistors for the following stages. A transistor size of 2×25 μm transistor is employed in all three stages, which offers cut-off frequency f T and maximum oscillating frequency f max of 95 and 213 GHz, respectively. Using the proposed circuit configuration and taking advantage of the superior characteristics of GaN-on-Si HEMT devices, a W-band PA with a maximum output power of 20.7 dBm, a peak power gain of 15.9 dB, and a peak power-added-efficiency (PAE) of 7.2% at 96 GHz has been achieved. Compared to the published GaN-on-Si PAs, this work demonstrates the highest operating frequencies with high gain and comparable power density. Also, the PA only occupies an area of 1.45 mm 2 , which is also among the smallest compared to other W-band GaN PAs.
- A 96-GHz 15.9-dB Gain 20.7 dBm PSAT Power Amplifier in 60-nm GaN-on-Si HEMT
- Tsai-Rung Hu - National Tsing Hua UniversityHsin-Chieh Lin - National Health Research InstitutesYin-Cheng Chang - National Institutes of Applied ResearchSih-Han Li - National Taiwan UniversityDa-Chiang Chang - Taiwan Semiconductor Manufacturing Company (China)Shawn Shuo-Hung Hsu - National Tsing Hua University, College of Semiconductor Research
- 2025 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) (Kagoshima, Japan, 25/08/2025–27/08/2025)
- IEEE
- 3
- National Science and Technology Council (10.13039/501100020950)
- Conference paper
- 25/08/2025
- IEEE International Symposium on Radio-Frequency Integration Technology (Online), pp.196-198
- English