摘要
The proposed hybrid LDO integrates region detection (RD) and gate-edge detection (GED) techniques to optimize the ALDO-DLDO current ratio to break the PSR trade-off. At 10 kHz, the proposed HLDO achieves −49 dB and −40 dB PSR when V DO is 200 mV and 50 mV, respectively, maintaining high PSR up to 10 MHz range. For transient response, GED enables fast settling time; under a 1 mA-200 mA load step, the undershoot is 90 mV with an 8.7 ns settling time, and the overshoot is 92 mV with a 10.2 ns settling time.