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A K-band area-saving marchand balun integrated with low-noise amplifier in 0.18-μm CMOS
Conference paper

A K-band area-saving marchand balun integrated with low-noise amplifier in 0.18-μm CMOS

Hong-Shen Chen, Cheng-Hsuan Wu, Yi-Cheng Lin and Jenny Yi-Chun Liu
Asia-Pacific Microwave Conference Proceedings, APMC, pp.1196-1199
01/2018

Abstract

balun CMOS low-noise amplifier Electrical and Electronic Engineering
A new topology of Marchand balun with a compact area is demonstrated in 0.18-μm CMOS technology. The lengths of coupled windings are reduced significantly from quarter wavelength compared to the conventional ones. The coupling coefficient between windings is designed for specific impedance matching. The S-parameters of the differential outputs are tested. The proposed balun is first fabricated without and with matching networks to verify the properties, and later integrated with a single-input differential-output low-noise amplifier (SIDO LNA). It is shown that the proposed balun is well suited to integrate with an amplifier that it not only serves as a DC-block but also provides a compact impedance matching. The balun shows an insertion loss within 6 dB from 20-30 GHz, amplitude and phase imbalances within 0.4 dB and 4 o , respectively. The LNA shows a differential gain of 15.8 dB and noise figure (NF) of 6.4 dB at 25 GHz.

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