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A L.2V broadband D-band power amplifier with 13.2-dBm output power in standard RF 65-nm CMOS
Conference paper

A L.2V broadband D-band power amplifier with 13.2-dBm output power in standard RF 65-nm CMOS

Zuo-Min Tsai, Hsin-Chiang Liao, Yuan-Hong Hsiao, Huei Wang, Jenny Yi-Chun Liu, Mau-Chung Frank Chang, Yu-Ming Teng and Guo-Wei Huang
IEEE MTT-S International Microwave Symposium Digest, 6258394
2012
DOI: https://doi.org/10.1109/MWSYM.2012.6258394

Abstract

CMOS power amplifier D-band Impedance transform network Power combining
A D-band CMOS power amplifier in 65-nm CMOS with wider than 30 GHz small signal gain bandwidth is developed by using proposed impedance transform network to split original matching network into 8-ways to integrate 8 transistors. Without using additional combining networks, the 4-stage power amplifier achieves 13.2 dBm saturation output power with L.2 V supply at 140 GHz in a compact size of 0.38 mm 2 . The peak power-added efficiency is 14.6% with 115.2 mW dc power. © 2012 IEEE.

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