Abstract
An AlGaN/GaN Dual Metal Schottky Barrier Diode (SBD) was proposed and fabricated on a Si substrate. Two different metals were utilized to form the anode electrode. One is titanium which has a lower work function and the other is nickel which has a higher work function. Schottky barrier height (SBH) would be lowered by the presence of Ti which will reduce the turn-on voltage so that the forward current would be increased. And the higher SBH formed by Ni will help reducing the leakage current so that the breakdown voltage would be higher. From the experiments, the specific on-resistance is 5.27 mΩ･cm2 and breakdown voltage is 1020 V with an anode-cathode spacing of 12 µm.