Abstract
Commercial 40V-650V E-mode GaN-on-Si power HEMTs are presented, fabricated on an industrial 200mm Si CMOS compatible Au-free technology platform. Electrical characteristics of 100V and 650V GaN HEMTs are discussed first, featuring true E-mode operation with Vth of ~1.5V for 100V and ~2.5V for 650V devices, and delivering ultralow drain leakage current of <1e-10A/mm for fully rated 100V devices and <1e-9A/mm for fully rated 650V devices. Then, 200mm wafer electrical mapping of GaN HEMTs is shown, demonstrating excellent uniformity and reproductivity. And then, WLCSP and DFN package types are introduced for 40V/100V and 650V devices. For the first time, successful JEDEC qualification of 40V/100V GaN transistors on 200mm Si substrate is reported. Nearly dynamic Rdson free operation is also demonstrated for both 100V and 650V devices. Finally, peak efficiency of 96.58% for a 35W DC-DC buck converter using 40V GaN HEMTs and 94.15% for a 45W AC-DC converter utilizing 650V GaN HEMTs are obtained. In summary, high performance and low cost 200mm E-mode 40-650V GaN power technology is massive adoption ready for power electronics industry.