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A Nonvolatile Al-Edge Processor with 4MB SLC-MLC Hybrid-Mode ReRAM Compute-in-Memory Macro and 51.4-251TOPS/W
Conference paper

A Nonvolatile Al-Edge Processor with 4MB SLC-MLC Hybrid-Mode ReRAM Compute-in-Memory Macro and 51.4-251TOPS/W

Wei-Hsing Huang, Tai-Hao Wen, Je-Min Hung, Win-San Khwa, Yun-Chen Lo, Chuan-Jia Jhang, Huna-Hsi Hsu, Yu-Hsiana Chin, Yu-Chiao Chen, Chuna-Chuan Lo, …
Digest of Technical Papers - IEEE International Solid-State Circuits Conference, Vol.2023-February, pp.258-260
2023

Abstract

Electronic Optical and Magnetic Materials Electrical and Electronic Engineering
Low-power Al edge devices should provide short-latency (mathsfTmathsfWK-RP) and low-energy (mathsfEmathsfWK-RP) wakeup responses from power-off mode to handle event-triggered computing tasks with high inference accuracy (IA), which requires high-capacity nonvolatile memory (NVM) to store high-precision weight data in power-off and high bit-precision multiply and accumulate (MAC) operations with high energy efficiency. SRAM computing-in-memory (CIM) and digital processors suffer large mathsfEmathsfWK-RP and long mathsfTmathsfWK-RP due to the movement of weight data from off-chip NVM to the on-chip buffer and processing unit after wakeup. Thus, on-chip nonvolatile CIM (nvCIM) is preferred for Al-edge processors by combining NVM storage and computing tasks on the same macro. Among nvCIM structures, in-memory compute (IMC) [1] provides short computing latency and high energy efficiency, but suffers from low computing yield. Near-memory compute (NMC) [2-4] provides high computing yield, but suffers long computing latency and low energy efficiency.

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