Abstract
In this paper, a novel structure for a vertical power MOSFET is designed to have higher breakdown voltage and lower specific on-state resistance compared with a conventional vertical power MOSFET.
- Title
- A Novel Design of P Implanted Regions for a Power MOSFET
- Translated title
- A Novel Design of P Implanted Regions for a Power MOSFET
- Creators - without role
- Wen-Bin Yeh - National Taiwan UniversityYi-Che Su - National Taiwan UniversityKung-Yen Lee - National Taiwan UniversityChia-Hui Cheng - National Tsing Hua University Taipei , Institute of Electronics EngineeringChih-Fang Huang - National Tsing Hua University Taipei , Institute of Electronics Engineering
- Publication Details
- IMFEDK 2018 - 2018 International Meeting for Future of Electron Devices, Kansai, 8581972
- Identifiers
- 9781538663400; 9957772458906774
- Copyright
- © 2018 IEEE.
- Academic Unit
- Institute of Electronics Engineering, College of Electrical Engineering and Computer Science, National Tsing Hua University
- Language
- English
- Resource Type
- Conference paper