摘要
This work introduces an electromechanically coupled resonator featuring a wide frequency tuning range through a low tuning voltage, while maintaining stable output signal amplitude. The design is based on a 0.18μm 1P6M complementary metal-oxide-semiconductor (CMOS) technology and employs a maskless post-fabrication process. The capacitive resonator consists of a vertically stacked dual-gap structure, comprising a 400nm effective gap (g eff ) titanium nitride composite (TiN-C) transducer with an embedded 125nm effective gap metal-insulator-metal (MIM) tuning element. This configuration achieves a 6.84% frequency shift in an out-of-phase mode with merely a 10V tuning voltage (V t ) change in the MIM tuning element, while the signal amplitude remains stable across different V t under the same bias voltage (V bias ) in the TiN-C transduced resonant device. Finally, the oscillator's phase noise remains nearly identical under different V t , showing consistent oscillating performance. The wide frequency tuning range, stable amplitude output, and CMOS compatibility of the proposed design make it a promising candidate for integration into CMOS-MEMS based voltage-controlled oscillators (VCOs).