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A Novel Methodology to Predict Process-Induced Warpage in Advanced BEOL Interconnects
Conference paper

A Novel Methodology to Predict Process-Induced Warpage in Advanced BEOL Interconnects

Y.H. Lin, C.C. Lee, C.Y. Liao, M.H. Lin, W.C. Tu, Robin Chen, H.P. Chen, Winston S. Shue and Min Cao
IEEE International Reliability Physics Symposium Proceedings, Vol.2023-March
2023

Abstract

BEOL Equivalent material method FEA Process-oriented simulation warpage prediction Engineering (all)
Process-induced warpage caused by high-density interconnects in the back-end of line (BEOL) structure, may affect the performance and the reliability of the product during the packaging process. In this paper, a BEOL structure is used to develop a process-oriented simulation methodology to optimize the design and predict warpage. To reduce simulation time and obtain accurate predictions, the equivalent material method and equivalent residual stress are used in our proposed method. The layer-by-layer warpage predictions matched the measurement data.

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