- Title
- A Performance Study of Ge1-xSix on Ge-Based NMOSFETs by Using Device Simulation Combined with Higher Order Stress-Piezoresistive Relationships
- Creators - without role
- C. C. Lee - 國立清華大學工學院動力機械工程學系C. P. HsiehP. C. HuangS. W. ChengM. H. Liao
- Publication Details
- 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9) 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9)
- Identifiers
- 9957776018406774
- Academic Unit
- Department of Power Mechanical Engineering, College of Engineering, National Tsing Hua University
- Language
- Traditional Chinese
- Resource Type
- Conference paper
Conference paper
A Performance Study of Ge1-xSix on Ge-Based NMOSFETs by Using Device Simulation Combined with Higher Order Stress-Piezoresistive Relationships
9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9) 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9)
2015
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