- Title
- A Resultant Stress Effect of CESL and Geometrical Designs of Poly Gateon Nano-Scaled nMOSFETs with a Si1-xGex Channel
- Creators - without role
- C. C. Lee - 國立清華大學工學院動力機械工程學系Z. H. ChenC. H. LiuT. L. Tzeng
- Publication Details
- 11th International Nanotech Symposium & Exhibition (NANO KOREA 2013) 11th International Nanotech Symposium & Exhibition (NANO KOREA 2013)
- Identifiers
- 9957771857506774
- Academic Unit
- Department of Power Mechanical Engineering, College of Engineering, National Tsing Hua University
- Language
- Traditional Chinese
- Resource Type
- Conference paper
Conference paper
A Resultant Stress Effect of CESL and Geometrical Designs of Poly Gateon Nano-Scaled nMOSFETs with a Si1-xGex Channel
11th International Nanotech Symposium & Exhibition (NANO KOREA 2013) 11th International Nanotech Symposium & Exhibition (NANO KOREA 2013)
2013
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