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A Study of Read Variability in Backfill Contact Random Access Memory
Conference paper

A Study of Read Variability in Backfill Contact Random Access Memory

Fu-Cheng Chang, Yao-Hung Huang, Chrong-Jung Lin and Ya-Chin King
2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020, pp.39-40
08/2020
DOI: https://doi.org/10.1109/VLSI-TSA48913.2020.9203597

Abstract

RRAM array;backfill contact resistive random access memory (B Artificial Intelligence Hardware and Architecture Electrical and Electronic Engineering Electronic Optical and Magnetic Materials

Variability between and within cells in an RRAM array are found to drastically reduce the reading window and leading to erratic bits. Main failure mechanisms causing read disturb and variabilities in 1T-1R backfill contact resistive random access memory (BCRRAM) array are investigated in this study. Experimental data reveal that read disturb failure can lead to significant shift in its resistive states. An optimized reading scheme and a modified incremental step pulse programing (ISPP) algorithm are proposed to minimize the occurrence of read disturb failure in BCRRAM arrays.

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