A TCAD Simulation Study for Strained InGaAs Channel NMOSFET with a High-k Dielectric Oxide Layer and a Metal Gate Electrode

Conference paper

P. H. Sun, C. C. Lee and S. T. Chang

16th Workshop on Dielectric Materials (WoDiM 2010) 16th Workshop on Dielectric Materials (WoDiM 2010)

2010

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Title: A TCAD Simulation Study for Strained InGaAs Channel NMOSFET with a High-k Dielectric Oxide Layer and a Metal Gate Electrode
Creators - without role: P. H. Sun
C. C. Lee - 國立清華大學工學院動力機械工程學系
S. T. Chang
Publication Details: 16th Workshop on Dielectric Materials (WoDiM 2010) 16th Workshop on Dielectric Materials (WoDiM 2010)
Identifiers: 9957774852206774
Academic Unit: Department of Power Mechanical Engineering, College of Engineering, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Conference paper