摘要
In this paper, we propose a V-band series feedback oscillator with a parallel LC resonator based on 0.15-μm GaN HEMT. The proposed oscillator utilizes the features of high-power and high-frequency operation of GaN HEMTs and achieves a fundamental oscillation frequency of 49.9 GHz with an output power of 3.2 dBm. Moreover, the frequency can be tuned from 49.4 GHz to 49.9 GHz with a maximum output power of 5 dBm and power variation smaller than 1.8 dB. The PN achieved for the oscillator is -100.5 dBc/Hz@1 MHz and -130.9 dBc/Hz@10 MHz, respectively. The proposed GaN oscillator has realized the high oscillation frequency based on the 0.15-μm GaN HEMT and achieves the best figure of merit compared with other published V-band GaN oscillators.