Abstract
Three-dimensional (3D) random access memory (RAM) using through-silicon vias for inter-die interconnects has been considered as a new approach to overcome the memory wall. In this paper, we propose a built-in self-test (BIST) scheme for 3D RAMs. In the BIST scheme, a clock-domain-crossing-aware test pattern generator is proposed to cope with the clock-domain-crossing issue. An inter-die synchronization mechanism is also proposed to synchronize the BIST circuits in different dies. Furthermore, the BIST circuit provides the high-programmability feature to support the selection of RAMs in a die for testing such that it can support thermal management during the test. We design the proposed BIST scheme in a 3D IC with processor and RAM dies. Experimental results show that the area cost of the BIST circuit is very small. The area overhead of the BIST circuit for four 8192×64-bit RAMs in a die is only 0.45% using TSMC 90nm 1P9M CMOS process technology. © 2012 IEEE.