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A comprehensive study of Ge1-xSix on Ge for the Ge nMOSFETs with tensile stress, shallow junctions and reduced leakage
Conference paper

A comprehensive study of Ge1-xSix on Ge for the Ge nMOSFETs with tensile stress, shallow junctions and reduced leakage

Guang-Li Luo, Shih-Chiang Huang, Cheng-Ting Chung, Dawei Heh, Chao-Hsin Chien, Chao-Ching Cheng, Yao-Jen Lee, Wen-Fa Wu, Chiung-Chih Hsu, Mei-Ling Kuo, …
Technical Digest - International Electron Devices Meeting, IEDM, 5424246
2009
DOI: https://doi.org/10.1109/IEDM.2009.5424246
Appears in  keyword about Physics

Abstract

Electronic Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering Materials Chemistry
For the first time, growth of high-quality Ge-rich Ge 1-x Si x (0≤x≤0.14) layers on Ge substrate was demonstrated. An effective suppression of the phosphorus diffusion in Ge 1-x Si x and a better thermal stability of the nickel germanide on Ge 1-x Si x were observed. A higher rectifying ratio with a reduced diode leakage current in n + -Ge 1-x Si x /p-Ge1-xSix is compared with n + -Ge/p-Ge. These results indicate that it is suitable for Ge 1-x Si x to be used as source/drain (S/D) to fabricate the uniaxial tensile-strained channel Ge nMOSFETs. © 2009 IEEE.

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