Abstract
A simple gate-controllable high-voltage silicon-controlled rectifier (GC-HVSCR) is proposed in this work. With simply using an integrated control nMOS, the device can provide ESD protection while avoiding the conventionally annoying latch-up problem in SCR under normal circuit operation condition. The behavior of the proposed device has been studied by simulations and verified by real implementation in a 0.5-μm high-voltage (30V) CMOS process. ©2008 IEEE.