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A high performance and scalable FinFET BE-SONOS device for NAND flash memory application
Conference paper

A high performance and scalable FinFET BE-SONOS device for NAND flash memory application

Tzu-An Hsu, Hang-Ting Lue, Wu-Chin Peng, Ya-Chin King, Chia-Wei Wu, Szu-Yu Wang, Ming-Tsung Wu, Shih-Ping Hong, Jung-Yu Hsieh, Tahone Yang, …
International Symposium on VLSI Technology, Systems, and Applications, Proceedings, pp.56-57
2008
DOI: https://doi.org/10.1109/VTSA.2008.4530796
Appears in  keyword about Physics

Abstract

Electronic Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering
A high-performance body tied FinFET BE-SONOS device is demonstrated, suitable for NAND Flash memory scaling beyond 30 nm technology node. BE-SONOS offers efficient hole tunneling erase and excellent data retention. When integrated into a FinFET structure, a much higher program/erase speed is obtained, owing to the inherent field enhancement (FE) effect around the fin tip. In this work, a very scaled (36 nm) FinFET BE-SONOS with successful NAND array functions, including fast block erase speed (<2 msec to V <sub>T</sub> < -1V), moderate Incremental-Step-Pulse Programming (ISPP) slope (>0.6), successful self-boosting program-inhibit window, good read disturb property (>100K read), and excellent cycling endurance (>10K) are demonstrated. © 2008 IEEE.

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