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A low-actuation voltage design for RF CMOS-MEMS switches
Conference paper

A low-actuation voltage design for RF CMOS-MEMS switches

Horng-Hsiang Lai, Wen-Chien Chen and Sheng-Shian Li
Proceedings of IEEE Sensors, 6411335
2012

Abstract

A switch-based micromechanical actuator fabricated using a foundry-oriented CMOS-MEMS platform has been demonstrated with low actuation voltages via the pull-in aided frame design. With such a two-stage mechanical design, the actuation voltage of the proposed actuator has been reduced by 35% as compared to that of the conventional single-stage counterpart with the same off-state gap spacing while the switch structure of this work still preserves similar switching time (i.e., relatively the same fundamental resonance frequency). The switch design methodology and foundry-type fabrication technology is expected to bring mechanical on/off switching capability into high-Q CMOS-MEMS circuits for future multimode, multi-band wireless communication systems. © 2012 IEEE.

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