Abstract
This paper presents a low-cost and broadband bondwire interconnect for chip-to-chip and chip-to-carrier communications. Four transmission lines and three signal bondwires form a three-path interconnect structure which can greatly reduce the bondwire effect. Ground bondwires are also carefully deployed to have good ground connection between chips or chip and carrier. An interconnect from a 0.18-μm CMOS chip to a Glass-Integrated-Passive-Device (GIPD) carrier is designed to verify the idea. Measured results of three samples show that the insertion loss and return loss can be better than 3 dB and 11.2 dB from DC up to 92 GHz.