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A low gate leakage current and small equivalent oxide thickness MOSFET with Ti/HfO2 high-k gate dielectric
Conference paper   Peer reviewed

A low gate leakage current and small equivalent oxide thickness MOSFET with Ti/HfO2 high-k gate dielectric

C.H. Fu, K.S. Chang-Liao, Y.A. Chang, Y.Y. Hsu, T.H. Tzeng, T.K. Wang, D.W. Heh, P.Y. Gu and M.J. Tsai
Microelectronic Engineering, Vol.88(7), pp.1309-1311
07/2011
DOI: https://doi.org/10.1016/j.mee.2011.03.073

Abstract

EOT Gate dielectric HfO2 Higher-k Ti
Annealing effects on electrical characteristics and reliability of MOS device with HfO 2 or Ti/HfO 2 high-k dielectric are studied in this work. For the sample with Ti/HfO 2 higher-k dielectric after a post-metallization annealing (PMA) at 600 °C, its equivalent oxide thickness value is 7.6 and the leakage density is about 4.5 × 10 -2 A/cm 2 . As the PMA is above 700 °C, the electrical characteristics of MOS device would be severely degraded. © 2011 Elsevier B.V. All rights reserved.

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