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A miniaturized 70-GHz broadband amplifier in 0.13-μm CMOS technology
Conference paper   Peer reviewed

A miniaturized 70-GHz broadband amplifier in 0.13-μm CMOS technology

Jun-De Jin and Shawn S. H. Hsu
IEEE Transactions on Microwave Theory and Techniques, Vol.56(12), pp.3086-3092
12/2008

Abstract

Broadband amplifier CMOS Common-source (CS) stage Gain-bandwidth product (GBW) Transformer peaking
A 70-GHz broadband amplifier is realized in a 0.13- μm CMOS technology. By using five cascaded common- source stages with the proposed asymmetric transformer peaking technique, the measured bandwidth and gain can reach 70.6 GHz and 10.3 dB under a power consumption (P DC ) of 79.5 mW. Within the circuit bandwidth, the maximum input and output reflection coefficients are -6.1 and -10.8 dB}, respectively. The group delay variation is ± 12.0 ps, and the output 1-dB compression point is 0.2 dBm at 5 GHz. With the miniaturized transformer design, the occupied core area of the circuit is only ∼ 0.05 mm 2 . This amplifier demonstrates a gain-bandwidth product of 231 GHz and a GBW/P DC up to 2.9 GHz/mW. © 2006 IEEE.

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