Abstract
This work presents a high density high-k metal gate (HKMG) one-time programmable (OTP) cell. Without additional processes and steps, this OTP cell is fully compatible to 28nm HKMG CMOS process. The OTP cell adopts high-k dielectric breakdown as programming mechanism to obtain more than 10 5 times of on/off read window. Moreover, it features low power and fast program speed by 4.5V program voltage in 100 μs. In addition to the ultrasmall cell area of 0.0425μm 2 , the superior performance of disturb immunities and data retention further support the new logic OTP cell to be a very promising solution in advanced logic non-volatile memory (NVM) applications. © 2014 The Japan Society of Applied Physics.