Abstract
A new fully CMOS process compatible anti-fuse device with programmable contact has been developed for advanced programmable logic applications. This anti-fuse processed by pure logic process and decoupled with transistor gate oxide has a highly stable and extremely wide on/off window. It exhibits superior disturb immunity in program and read operations. The device additionally provides the capability to adapt multiple programmable contacts for the needs of elevated data writing and reading performance. This novel anti-fuse cell is a very promising programmable logic solution with fully CMOS logic compatible process below 0.13μm node. ©2007 IEEE.