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A new analytical model for low voltage hot electron taking Auger recombination as well as phonon scattering process into account
Conference paper

A new analytical model for low voltage hot electron taking Auger recombination as well as phonon scattering process into account

Riichiro Shirota and Tetsuya Yamaguchi
Technical Digest - International Electron Devices Meeting, IEDM, Vol.1991-January, pp.123-126
1991
DOI: https://doi.org/10.1109/IEDM.1991.235485
Appears in  keyword about Physics

Abstract

Absorption Analytical models Charge carrier processes Distribution functions Equations Low voltage MOSFETs Phonons Secondary generated hot electron injection Spontaneous emission Electronic Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering Materials Chemistry
The authors describe a novel accurate model and a numerical analysis of hot electron injection into the gate oxide of submicron MOSFETs in the low applied voltage region (V <sub>GS</sub> <5 V, V <sub>DS</sub> <3 V). The model quantitatively takes into account both the Auger recombination process and the phonon assist process. Calculated results agree with experimental results in the measured range of 2.3 V<V <sub>DS</sub> <2.7 V and 2.5 V<V <sub>GS</sub> <4.1 V. This agreement strongly indicates that the new model can give an accurate understanding of the injection mechanism, and successfully explains the low voltage hot electron phenomena.

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