A new laterally conductive bridge random access memory by fully CMOS logic compatible process

Min-Che Hsieh; Yung-Wen Chin; Yu-Cheng Lin; Yu-Der Chih; Kan-Hsueh Tsai; Ming-Jinn Tsai; Ya-Chin King; Chrong Jung Lin

doi:10.7567/JJAP.53.04ED10

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A new laterally conductive bridge random access memory by fully CMOS logic compatible process

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A new laterally conductive bridge random access memory by fully CMOS logic compatible process

Min-Che Hsieh, Yung-Wen Chin, Yu-Cheng Lin, Yu-Der Chih, Kan-Hsueh Tsai, Ming-Jinn Tsai, Ya-Chin King and Chrong Jung Lin

Japanese Journal of Applied Physics, Vol.53(4 SPEC. ISSUE), 04ED10

2014

DOI: https://doi.org/10.7567/JJAP.53.04ED10

Appears in keyword about Physics

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Physics and Astronomy (all)

This paper proposes a novel laterally conductive bridge random access memory (L-CBRAM) module using a fully CMOS logic compatible process. A contact buffer layer between the poly-Si and contact plug enables the lateral Ti-based atomic layer to provide on/off resistance ratio via bipolar operations. The proposed device reached more than 100 pulse cycles with an on/off ratio over 10 and very stable data retention under high temperature operations. These results make this Ti-based L-CBRAM cell a promising solution for advanced embedded multi-time programmable (MTP) memory applications. © 2014 The Japan Society of Applied Physics.

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Title: A new laterally conductive bridge random access memory by fully CMOS logic compatible process
Translated title: A new laterally conductive bridge random access memory by fully CMOS logic compatible process
Creators - without role: Min-Che Hsieh - National Tsing Hua University
Yung-Wen Chin - Microelectronics Laboratory, Institute of Electronics Engineering, National Tsing Hua University
Yu-Cheng Lin - Microelectronics Laboratory, Institute of Electronics Engineering, National Tsing Hua University
Yu-Der Chih - Taiwan Semiconductor Manufacturing Company (Taiwan)
Kan-Hsueh Tsai - Industrial Technology Research Institute
Ming-Jinn Tsai - Electronics and Optoelectronics Research Laboratory, Industrial Technology Research Institute
Ya-Chin King - Microelectronics Laboratory, Institute of Electronics Engineering, National Tsing Hua University
Chrong Jung Lin - National Tsing Hua University
Publication Details: Japanese Journal of Applied Physics, Vol.53(4 SPEC. ISSUE), 04ED10
Identifiers: 9957773025306774
Academic Unit: Institute of Electronics Engineering, College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: English
Resource Type: Conference paper

A new laterally conductive bridge random access memory by fully CMOS logic compatible process

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