摘要
A new saw-like self-recovery Self-Aligned Nitride (SAN) memory cell is proposed and fabricated in 28nm high-k metal gate (HKMG) CMOS process for high-density logic NVM applications. The cell is operated with Source-Side Injection (SSI) for programming and band-to-band hot holes (BBHH) for erasing. Two effective self-heating recovery mechanisms are proposed and performed to maintain a stable On/Off read window after cycling stresses. Besides, the characteristic and reliability comparison of the SAN cell in other technology nodes, 90nm/45nm/32nm, are characterized to further verify the saw-like self-detrapping and self-recovery operation. The new 28nm HKMG SAN memory cell with the self-detrapping recovery results excellent and superior endurance performance and can provide a very promising solution for logic NVM in advanced technologies. © 2014 IEEE.