Abstract
This paper presents a new wideband modeling technique to exactly describe the time-domain (TD) responses of deep sub-micron MOSFET's, which leads to wideband models. This new method is suitable for modeling the MOSFET's used in high-speed or switching type circuits. The technique was developed based on applying an ultra-short impulse signal with 30ps (pico-second) width to the devices. As a result, extension equivalent circuit models incorporating BSIM3v3 were derived in the modeling process to meet the wideband requirement without any alteration on the DC bias condition. Experiments were conducted to reveal the feasibility of the technique. Results show that the generated wideband models (w-models) can be used to describe the TD responses of the MOSFET's with a time-scale down to pico-seconds order. That is, the proposed method is easy to establish good wideband (tens or even hundreds of GHz) deep sub-micron MOSFET models for describing their wideband characteristics.